1064nm用
マイクロチップレーザ発生素子

BATOP社より1064nm 用マイクロチップレーザ発生素子が発売になりました。

YVO4 結晶と可飽和吸収体を接着した素子です。
約50psec 用と約150psec 発生用の２種類を用意しております。

808nm（CW）の励起パワーを上げる事により繰り返し周波数が高くなり、
平均出力も上げる事ができます。

MC - Microchip in reflection mode

• The Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).
• The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.
• The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.

Part No.	Description	Data Sheet
MC-1064-100ps	• Microchip in reflection mode • Emission wavelength λ = 1064 nm • Pulse duration ~ 100 ps • Pulse energy ~ 20 nJ • Repetition rate 20 kHz - 700 kHz • Pump wavelength 808 nm
MC-1064-240ps	• Microchip in reflection mode • Emission wavelength λ = 1064 nm • Pulse duration ~ 240 ps • Pulse energy ~ 30 nJ • Repetition rate 50 kHz - 800 kHz • Pump wavelength 808 nm

MCT - Microchip in transmission mode

• The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
• The laser output beam is in the same direction as the pump beam.
• The laser output is linear polarized.

Part No.	Description	PDF
MCT-1064-100ps	• Microchip in transmission mode • Emission wavelength λ = 1064 nm • Pulse duration ~ 100 ps • Pulse energy ~ 60 nJ • Repetition rate 20 kHz - 200 kHz • Pump wavelength 808 nm
MCT-1064-200ps	• Microchip in transmission mode • Emission wavelength λ = 1064 nm • Pulse duration ~ 200 ps • Pulse energy ~ 60 nJ • Repetition rate 20 kHz - 200 kHz • Pump wavelength 808 nm

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