可飽和吸収ミラー SAM™
SAM 波長：
940nm｜980nm｜1040nm｜1064nm｜1100nm｜1150nm｜1300nm｜1340nm｜1420nm｜
1510nm｜1550nm｜2000nm｜2400nm
SAM™ - saturable absorber mirror λ= 1064 nm
Fast SAMs 1064 nm with relaxation time t ～500 fs
型番をクリックしますと、データシート（PDF）がご覧になれます。
| 型番 help | 概要 |
| SAM-1064-0.7-x-500fs | SAM: λ = 1064 nm, absorptance 0.7 %, D R = 0.4 %, t ～ 500 fs |
| SAM-1064-1-x-1ps | SAM: λ = 1064 nm, absorptance 1 %, D R = 0.6 %, t ～ 1 ps |
| SAM-1064-1.5-x-1ps | SAM: λ = 1064 nm, absorptance 1.5 %, D R = 0.8 %, t ～ 1 ps |
| SAM-1064-2-x-1ps | SAM: λ = 1064 nm, absorptance 2 %, D R = 1.2 %, t ～ 1 ps |
| SAM-1064-3-x-1ps | SAM: λ = 1064 nm, absorptance 3 %, D R = 1.6 %, t ～ 1 ps |
| SAM-1064-3.5-x-1ps | SAM: λ = 1064 nm, absorptance 3.5 %, D R = 2 %, t ～ 1 ps |
| SAM-1064-4-x-1ps | SAM: λ = 1064 nm, absorptance 4 %, D R = 2.4 %, t ～ 1 ps |
| SAM-1064-8-x-600fs | SAM: λ = 1064 nm, absorptance 8 %, D R = 5 %, t ～ 600 fs, dispersion data |
| SAM-1064-13-x-500fs | SAM: λ = 1064 nm, absorptance 13 %, D R = 8 %, t ～ 500 fs, resonant design, |
| SAM-1064-18-x-500fs | SAM: λ = 1064 nm, absorptance 18 %, D R = 10 %, t ～ 500 fs, antiresonant multi quantum well structure, |
| SAM-1064-21-x-500fs | SAM: λ = 1064 nm, absorptance 21 %, D R = 10 %, t ～ 500 fs, multi quantum well structure, |
| SAM-1064-23-x-1ps | SAM: λ = 1064 nm, absorptance 28 %, D R = 15 %, t ～ 1 ps, antiresonant multi quantum well structure, |
| SAM-1064-26-x-1ps | SAM: λ = 1064 nm, absorptance 28 %, D R = 13 %, t ～ 1 ps, resonant multi quantum well structure, |
| SAM-1064-30-x-1ps | SAM: λ = 1064 nm, absorptance 30 %, D R = 17 %, t ～ 1 ps, antiresonant multi quantum well structure for fiber laser mode-locking, dispersion data |
| SAM-1064-40-x-500fs | SAM: λ = 1064 nm, absorptance 40 %, D R = 22 %, t ～ 500 fs, antiresonant multi quantum well structure, |
| SAM-1064-50-x-500fs | SAM: λ = 1064 nm, absorptance 50 %, D R = 28 %, t ～ 500 fs, antiresonant multi quantum well structure, |
| SAM-1064-70-x-500fs | SAM: λ = 1064 nm, absorptance 70 %, D R = 40 %, t ～ 500 fs, multi quantum well structure for fiber laser mode-locking |
| passive heat sink | passive heat sink for fiber coupled SAM |
SAMs 1064 nm with relaxation time t ～3 ps
型番をクリックしますと、データシート（PDF）がご覧になれます。
| 型番 help | 概要 |
| SAM-1064-5-x-3ps | SAM: λ = 1064 nm, absorptance 5 %, D R = 3 %, t ～ 3ps |
| SAM-1064-5-x-5ps | SAM: λ = 1064 nm, absorptance 5 %, D R = 3.5 %, t ～ 5ps, antiresonant structure |
| SAM-1064-12-x-5ps | SAM: λ = 1064 nm, absorptance 12 %, D R = 7 %, t ～ 5ps, antiresonant structure |
| SAM-1064-18-x-5ps | SAM: λ = 1064 nm, absorptance 18 %, D R = 10 %, t ～ 5ps, antiresonant structure |
| SAM-1064-50-x-2ps | SAM: λ = 1064 nm, absorptance 50 %, D R = 33 %, t ～ 2ps, resonant absorber structure |
| SAM-1064-50-x-5ps | SAM: λ = 1064 nm, absorptance 50 %, D R = 25 %, t ～ 5ps, resonant absorber structure |
| SAM-1064-70-x-3ps | SAM: λ = 1064 nm, absorptance 70 %, D R = 44 %, t ～ 3ps, resonant multi quantum well structure |
SAMs 1064 nm with relaxation time t ～ 10 ps
型番をクリックしますと、データシート（PDF）がご覧になれます。
| 型番 help | 概要 |
| SAM-1064-0.7-x-10ps | SAM: λ = 1064 nm, absorptance 0.7 %, D R = 0.4 %, t ～ 10ps |
| SAM-1064-1-x-10ps | SAM: λ = 1064 nm, absorptance 1 %, D R = 0.6 %, t ～ 10ps |
| SAM-1064-2-x-10ps | SAM: λ = 1064 nm, absorptance 2 %, D R = 1.2 %, t ～ 10 ps |
| SAM-1064-4-x-10ps | SAM: λ = 1064 nm, absorptance 4 %, D R = 3 %, t ～ 10 ps |
| SAM-1064-12-x-16ps | SAM: λ = 1064 nm, absorptance 12 %, D R = 6 %, t ～ 16 ps |
| SAM-1064-23-x-9ps | SAM: λ = 1064 nm, absorptance 23 %, D R = 13 %, t ～ 9 ps, antiresonant design for fiber laser mode-locking |
| SAM-1064-38-x-7ps | SAM: λ = 1064 nm, absorptance 38 %, D R = 23 %, t ～ 7 ps, resonant multi quantum well structure for fiber laser mode-locking, |
| SAM-1064-40-x-9ps | SAM: λ = 1064 nm, absorptance 40 %, D R = 25 %, t ～ 9 ps, antiresonant multi quantum well structure for fiber laser mode-locking |
| SAM-1064-50-x-9ps | SAM: λ = 1064 nm, absorptance 50 %, D R = 33 %, t ～ 9 ps, antiresonant multi quantum well structure for fiber laser mode-locking |
| SAM-1064-50-x-12ps | SAM: λ = 1064 nm, absorptance 50 %, D R = 40 %, t ～ 12 ps, antiresonant multi quantum well structure for fiber laser mode-locking |
| SAM-1064-65-x-9ps | SAM: λ = 1064 nm, absorptance 65 %, D R = 50 %, t ～ 9 ps, antiresonant multi quantum well structure for fiber laser mode-locking, |
| passive heat sink | passive heat sink for fiber coupled SAM |
SAMs 1064 nm with relaxation time t ～ 25 ps
型番をクリックしますと、データシート（PDF）がご覧になれます。
| 型番 help | 概要 |
| SAM-1064-5-x-27ps | SAM: λ = 1064 nm, absorptance 5 %, D R = 4 %, t ～ 27 ps |
| SAM-1064-8-x-25ps | SAM: λ = 1064 nm, absorptance 8 %, D R = 6 %, t ～ 25 ps, antiresonant structure |
| SAM-1064-25-x-25ps | SAM: λ = 1064 nm, absorptance 25 %, D R = 19 %, t ～ 25 ps, antiresonant structure |
| SAM-1064-28-x-25ps | SAM: λ = 1064 nm, absorptance 28 %, D R = 20 %, t ～ 25 ps, antiresonant structure |
SAMs 1064 nm with relaxation time t >= 50 ps and HR
coating for 808 nm for Q-switched mictrochip laser
型番をクリックしますと、データシート（PDF）がご覧になれます。
| 型番 help | 概要 |
| SAM-1064-9-x-47ps | SAM: λ = 1064 nm, absorptance 9 %, D R = 5.7 %, t ～ 47 ps, reflectance at 808 nm: 67 % |
| SAM-1064-10-x-47ps | SAM: λ = 1064 nm, absorptance 10 %, D R = 6 %, t ～ 47 ps, reflectance at 808 nm: 96 % |
| SAM-1064-13-x-124ps | SAM: λ = 1064 nm, absorptance 13 %, D R = 7 %, t ～ 124 ps, reflectance at 808 nm: 70 % |
| SAM-1064-22-x-47ps | SAM: λ = 1064 nm, absorptance 22 %, D R = 14 %, t ～ 47 ps, reflectance at 808 nm: 50 % |
| SAM-1064-23-x-124ps | SAM: λ = 1064 nm, absorptance 23 %, D R = 12 %, t ～ 124 ps, reflectance at 808 nm: 75 % |
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